任堃

发布者:王叶发布时间:2020-05-15浏览次数:18

任堃,1986.12出生,男,博士,讲师2014年毕业于中国科学院大学微电子与固体电子学专业,2014年获中国科学院大学博士学位。现任材料与环境工程学院讲师

主要从事新型固态存储相变存储材料与器件、人工神经网络器件、三维堆叠存储器件选通单元等研究,在微电子存储材料与器件方面有较深的学术造诣。以第一作者和通讯作者身份在ACS Applied Materials & Interfaces,NanoscaleJournal of Materials Chemistry CScripta MaterialiaMRS BulletinApplied Physics Letters等期刊发表论文20余篇。部分成果如下:

第一作者: Electrical switching properties and structural characteristics of GeSe-GeTe filmsNanoscale,2019, 11, 1595-1603.

第一作者: Reducing structural change in the phase transition of Ge-doped Bi0.5Sb1.5Te3 to enable high-speed and low-energy memory switching, Journal of Materials Chemistry C, 2019, DOI: 10.1039/c9tc03494c.

第一作者: Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application, Applied Physics Letters, 2018.2.15, 112, 073106.

通讯作者:Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption, ACS Applied Materials & Interfaces, 2019, 11,11,10848-10855.